unisonic technologies co., dtc124e npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., qw-r206-045,d npn digital transistor (built-in resistors) ? features *built-in bias resistors enable t he configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). *the bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input they also have the advantage of almost completely eliminating parasitic effects. *only the on / off conditions need to be set for operation, making device design easy. ? equivalent circuit ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 dtc124el-ae3-r DTC124EG-AE3-R sot-23 g i o tape reel dtc124el-al3-r dtc124eg-al3-r sot-323 g i o tape reel dtc124el-an3-r dtc124eg-an3-r sot-523 g i o tape reel note: pin assignment: g: gnd i: in o: out ? marking
dtc124e npn epitaxial si licon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-045,d ? absoluate maxium ratings (t a = 25 , unless otherwise specified.) note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a = 25 ) parameter symbol test conditions min typ max unit input voltage v i ( off ) v cc = 5v, i out =100 a 0.5 v v i ( on ) v out = 0.2v, i out = 5ma 3 output voltage v o ( on ) i out /i in = 10ma / 0.5 ma 0.1 0.3 v input current i i v in = 5v 0.36 ma output current i o ( off ) v cc = 50v , v in =0v 0.5 a dc current gain g i v out = 5v, i out = 5ma 56 input resistance r1 15.4 22 28.6 k ? resistance ratio r2/r1 0.8 1 1.2 transition frequency f t v ce =10v, i e = -5ma, f=100mhz (note ) 250 mhz note: transition frequency of the device parameter symbol ratings unit supply voltage v cc 50 v input voltage v in -10 ~ +40 v output current i c 100 ma i o 30 power dissipation sot-23/sot-323 p d 200 mw sot-523 150 junction temperature t j 150 storage temperature t stg -40 ~ +150
dtc124e npn epitaxial si licon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-045,d typical characterics 100 100 50 20 10 5 2 1 500m 200m 100m t a = - 40 vo=-0.2v 1k 500 200 100 50 10 5 2 1 20 vo=5v t a =100 -40 25 1 500m 200m 100m 50m 20m 10m 5m 2m 1m lo/l i =20 t a =100 -40 25 0.5 1.0 1.5 2.0 2.5 3.0 vcc=5v 25 t a =100 -40 -25 0 fig.1 input voltage vs. output current (on characterristics) output current :io(a) fig.3 dc current gain vs.output current output current :io(a) fig.2 output current vs input voltage .(off characterristics) input voltage :v i(off) v fig.4output voltage vs.output current output current :io(a) 200 500 2m 5m 10m 20m 50m 100m 1m 100 200 500 2m 5m 10m 20m 50m 100m 1m 100 200 500 2m 5m 10m 20m 50m 100m 1m 100 10m 5m 2m 500 200 50 20 10 2 5 100 1m 1 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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